ماسفت IRF640n

Product Category:MOSFET
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:200 V
Id - Continuous Drain Current:16 A
Rds On - Drain-Source Resistance:180 mOhms
Vgs - Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Configuration:Single
Channel Mode:Enhancement
Height:9.4 mm
Length:10.3 mm
Transistor Type:1 N-Channel
Width:4.5 mm
Fall Time:38 ns
Pd - Power Dissipation:136 W
Rise Time:45 ns
Factory Pack Quantity:50
Typical Turn-Off Delay Time:54 ns
Typical Turn-On Delay Time:12 ns