ماسفت IRF3205

Product Category:MOSFET
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:55 V
Id - Continuous Drain Current:110 A
Rds On - Drain-Source Resistance:8 mOhms
Vgs - Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Configuration:Single
Channel Mode:Enhancement
Height:15.65 mm
Length:10 mm
Transistor Type:1 N-Channel
Width:4.4 mm
Fall Time:65 ns
Pd - Power Dissipation:200 W
Rise Time:101 ns
Typical Turn-Off Delay Time:50 ns
Typical Turn-On Delay Time:14 ns